RRJ#5

Shaw,C. (2011, April 11). New advance in nanofabrication techniques, 'significant'. www.newelectronics.co.uk. Retrieved on April 25, 2011. From http://www.newelectronics.co.uk/electronics-news/new-advance-in-nanofabrication-techniques-significant/32975/

Summary:

The author started describing what researchers at Lund University in Sweden and University of New South Wales discovered in the area of IC fabrication simplification. He said that research was done by these researchers at these universities to fix  huge problems caused by "packing higher densities of transistors into a chip", so their work resulted in  a new sophisticated transistor called "Fin Field Effect Transistor (FinFET)". FinFET transistor has a characteristic of having a channel etched silicon side to develop flat highland structure. He mentioned that the researchers claimed to obtain  better control by covering a certain area inside the transistor so they can get metal beneath the channel, and this way of linking has resulted in an interest in self assembled nanowires for computing devices. He said that it is possible to make coated nanowires into "fully functioning transistors" by a developed process because it is a wonderful thing to have such a modern transistor design. He said that the challenge was to make nanowire transistors surrounded by a metal wrap gate. Also, he continued presenting some details and features of a nanowire transistor by citing from a work published in NanoLetters. Finally, he said that the nanowire transistors will open new areas and new ways and methods in the semiconductor industry.

Reaction:

In this article, the author was depicting and characterizing a high-class type of transistor that can be made by an involved process to simplify IC fabrication steps. In spite of the excellent presentation of details, I think that the author went on and on in deeply describing the new technique of nanowire transistors. Thus, the article lacks stimulation and causes boredom. In my opinion, this article has tow advantages; first, it includes detailed information about an amazing kind of semiconductors. Second, it presents the benefits of such devices invented basically by academic researchers. On the other hand, this article has two disadvantages; firstly, it is classified as very professional article, so it is suitable just for electronic specialists. Secondly, it seems to be a one-sided direction because it did not take into account that everything in this world must have at least one disadvantage. In spite of its being a good development, however, this is the way in which article are written, because people who are interested in such areas always focus on and analyze specific issues. In addition, the author was good when he mentioned that these new devices may put into reach many methods and ways to invent more and more techniques.